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| SPICE MODEL: MMDT5451 MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * Complementary Pair One 5551-Type NPN, One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) K E2 B2 C1 C2 A B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 A B C D F M G H 0.65 Nominal Mechanical Data * * * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 3): KNM Ordering & Date Code Information: See Page 3 Weight: 0.006 grams (approx.) H J K L M a J D F L E1, B1, C1 = PNP5401 Section E2, B2, C2 = NPN5551 Section C2 B1 E1 All Dimensions in mm E2 B2 C1 Maximum Ratings, NPN 5551 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG NPN5551 180 160 6.0 200 200 625 -55 to +150 Unit V V V mA mW K/W C Maximum Ratings, PNP 5401 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG PNP5401 -160 -150 -5.0 -200 200 625 -55 to +150 Unit V V V mA mW K/W C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. DS30171 Rev. 8 - 2 1 of 5 www.diodes.com MMDT5451 a Diodes Incorporated Electrical Characteristics, NPN 5551 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Cobo hfe fT NF hFE VCE(SAT) VBE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Symbol @ TA = 25C unless otherwise specified Min 180 160 6.0 3/4 3/4 80 80 30 3/4 3/4 3/4 50 100 3/4 Max 3/4 3/4 3/4 50 50 3/4 250 3/4 0.15 0.20 1.0 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz 3/4 V V 6.0 250 300 8.0 pF 3/4 MHz dB Electrical Characteristics, PNP 5401 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: @ TA = 25C unless otherwise specified Min -160 -150 -5.0 3/4 3/4 50 60 50 3/4 3/4 3/4 40 100 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 240 3/4 -0.2 -0.5 -1.0 Unit V V V nA mA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100C VEB = -3.0V, IC = 0 IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -10V, f = 1.0MHz, IE = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -200mA, RS = 10W, f = 1.0kHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) VBE(SAT) 3/4 V V Cobo hfe fT NF 6.0 200 300 8.0 pF 3/4 MHz dB 4. Short duration test pulse used to minimize self-heating effect. DS30171 Rev. 8 - 2 2 of 5 www.diodes.com MMDT5451 Ordering Information (Note 5) Device MMDT5451-7-F Notes: Packaging SOT-363 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KNM Date Code Key Year Code Month Code 200 KNM= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 YM 2002 N May 5 2003 P Jun 6 2004 R Jul 7 0.15 0.14 2005 S Aug 8 IC = 10 IB 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 TA = -50C 1 10 100 1000 TA = 25C TA = 150C 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current (NPN5551) 1000 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V TA = 150C VCE = 5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150C TA = 25C TA = -50C hFE, DC CURRENT GAIN (NORMALIZED) 100 TA = 25C TA = -50C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current (NPN5551) 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current (NPN5551) DS30171 Rev. 8 - 2 3 of 5 www.diodes.com MMDT5451 1000 10.0 VCE = 5V fT, GAIN BANDWIDTH PRODUCT (MHz) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 10 IB 1.0 TA = 150C 100 10 0.1 TA = -50C TA = 25C 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current (NPN5551) 100 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6, Collector Emitter Saturation Voltage vs. Collector Current (PNP5401) 10,000 1.0 VCE = 5V hFE, DC CURRENT GAIN (NORMALIZED) VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50C 1000 TA = 150C TA = 25C 100 TA = 25C 10 TA = -50C TA = 150C 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7, DC Current Gain vs. Collector Current (PNP5401) 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401) 1000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 10V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9, Gain Bandwidth Product vs Collector Current (PNP5401) DS30171 Rev. 8 - 2 4 of 5 www.diodes.com MMDT5451 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30171 Rev. 8 - 2 5 of 5 www.diodes.com MMDT5451 |
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